41112 tkim tc-00002744/o1007 tiim tc-00000930/40407qb tiim tc-00000630/22107qb tiim tc-00000371 no. a0555-1/7 o1712 tkim tc-00002824 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 2SK4087LS n-channel power mosfet 600v, 14a, 610m , to-220f-3fs stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance r ds (on)=0.47 (typ.) ? input capacitance ciss=1200pf (typ.) ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 600 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature tch=150 c 14 a i dpack *2 tc=25 c (our ideal heat dissipation condition)*3 9.2 a drain current (pulse) i dp pw 10 s, duty cycle 1% 52 a allowable power dissipation p d 2.0 w tc=25 c (our ideal heat dissipation condition)*3 40 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 106 mj avalanche current *5 i av 14 a * 1 shows chip capability. * 2 package limited. * 3 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 4 v dd =50v, l=1mh, i av =14a (fig.1) * 5 l 1mh, single pulse package dimensions unit : mm (typ) 7528-001 ordering number : ena0555e product & package information ? package : to-220f-3fs ? jeita, jedec : sc-67 ? minimum packing quantity : 50 pcs./magazine marking electrical connection 1 3 2 k4087 lot no. 1 : gate 2 : drain 3 : source to-220f-3fs 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 2SK4087LS-1e
2SK4087LS no. a0555-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 600 v zero-gate voltage drain current i dss v ds =480v, v gs =0v 100 a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 3 5 v forward transfer admittance | yfs | v ds =10v, i d =7a 4 8 s static drain-to-source on-state resistance r ds (on) i d =7a, v gs =10v 0.47 0.61 input capacitance ciss v ds =30v, f=1mhz 1200 pf output capacitance coss 220 pf reverse transfer capacitance crss 50 pf turn-on delay time t d (on) see fig.2 27 ns rise time t r 72 ns turn-off delay time t d (off) 144 ns fall time t f 48 ns total gate charge qg v ds =200v, v gs =10v, i d =14a 46 nc gate-to-source charge qgs 8.6 nc gate-to-drain ?miller? charge qgd 26.4 nc diode forward voltage v sd i s =14a, v gs =0v 0.95 1.3 v fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit ordering information device package shipping memo 2SK4087LS-1e to-220f-3fs 50pcs./magazine pb free 50 50 rg v dd l 10v 0v 2SK4087LS pw 10 s d.c. 1% p. g 50 i d =7a r l =28 v dd =200v v out 2SK4087LS v in 10v 0v v in g s d drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it11753 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it11754 0 0 30 35 25 20 15 10 30 525 15 20 10 5 0 40 30 35 25 20 15 10 5 020 18 16 412 210 68 14 15v 10v tc=25 c v ds =20v v gs =5v 6v tc= --25 c 25 c 75 c 8v
2SK4087LS no. a0555-3/7 gate-to-source voltage, v gs -- v r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- it11755 case temperature, tc -- c r ds (on) -- tc static drain-to-source on-state resistance, r ds (on) -- it11756 --50 --25 0 25 50 75 100 125 150 0 1.4 0.4 1.0 0.6 0.2 1.2 0.8 it11758 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 5 3 2 7 5 3 2 2 1.0 7 5 3 diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a it11757 forward transfer admittance, | y fs | -- s | y fs | -- i d 25 c --25 c tc=75 c 0.1 23 57 23 1.0 23 5 5 7 10 1.0 10 2 3 5 7 5 7 3 2 3 v ds =10v ? tc= --25 c ? 75 c v gs =0v 3 0 2.0 1.8 1.0 1.4 15 13 59 711 0.6 0.2 1.2 1.6 0.8 0.4 i d =7a tc=75 c 25 c --25 c i d =7a, v gs =10v drain current, i d -- a sw time -- i d switching time, sw time -- ns it11759 10 100 3 2 2 5 7 1000 3 5 7 0.1 1.0 23 5 23 5 72 10 357 v dd =200v v gs =10v t d (off) t r t f ? t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 10000 7 5 3 2 50 5 253545 15 10 30 40 20 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it11760 f=1mhz ? ciss ? coss ? crss 25 c a s o drain-to-source voltage, v ds -- v drain current, i d -- a 2 3 5 7 2 0.1 3 5 7 2 1.0 3 5 7 2 10 3 5 7 100 0.01 23 57 2 1.0 10 35 7 it16815 it11761 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v 0 0 1 2 3 4 5 6 7 8 50 40 10 9 10 20 30 v ds =200v i d =14a 2 100 357 1000 i dp =52a (pw 10 s) i dc ( * 1)=14a operation in this area is limited by r ds (on). i dpack (*2)=9.2a 10 s 100 s dc operation 1ms 10ms 100ms tc=25 c single pulse * 1. shows chip capability * 2. our ideal heat dissipation condition
2SK4087LS no. a0555-4/7 0 0 20 40 5 10 60 20 15 80 100 120 25 35 30 40 45 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it11742 it11730 case temperature, tc -- c p d -- tc allowable power dissipation, p d -- w 0 0 20 40 1.0 0.5 60 2.0 1.5 80 100 120 2.5 140 160 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta it10478 ambient temperature, ta -- c avalanche energy derating factor -- %
2SK4087LS no. a0555-5/7 magazine speci cation 2SK4087LS-1e
2SK4087LS no. a0555-6/7 outline drawing 2SK4087LS-1e mass (g) unit 1.8 * for reference mm
2SK4087LS ps no. a0555-7/7 note on usage : since the 2SK4087LS is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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